2009
 High-concentration approach to development of the SOLAR PV installations with III-V multijunction cells  Proc. of the 3rdNordic PV Conference 18-19 May 2009 Tallinn, Estonia , V.D.Rumyantsev, N.Yu.Davidyuk, E.A.Ionova, V.R.Larionov, D.A.Malevskiy, P.V.Pokrovskiy, N.A.Sadchikov, V.M.Andreev |
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Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions Semiconductors, 43 (5) 2009, p. 644-651, V.M.Andreev, V.V.Evstropov, V.S.Kalinovsky, V.M.Lantratov, and V.P.Khvostikov |
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Solar cells based on gallium antimonide Semiconductors, 43 (5) 2009, p.668-671, V.M.Andreev, S.V.Sorokina, N.Kh.Timoshina, V.P.Khvostikov, and M.Z.Shvarts |
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The Effect of Temperature on the Efficiency of Concentrator PV Modules with MJ SC, Proc. of the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, PA, June 7-12, 2009, paper 365 E.S.Aronova, M.Z.Shvarts, A.A.Soluyanov |
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Nonlinearity Effects in III-V Multi-Junction Solar Cells, Proceedings of the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, PA, June 7-12, 2009, paper 545, M.Z.Shvarts, V.M.Emelyanov, N.Kh.Timoshina, V.M.Lantratov |
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Investigation of photovoltaic devices crystallization in MOCVD with in-situ monitoring Proceedings of the 24th European PV Solar Energy Conference and Exhibition, 21-25 September 2009, Hamburg, Germany, p. 538-544 N.A.Kalyuzhnyy, S.A.Mintairov, M.A.Mintairov, V.M.Lantratov |
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On dependence of the multijunction InGaP/GaAs/Ge, InGaP/GaAs solar cell efficiency on the sunlight concentration Proceedings of the 24th European PV Solar Energy Conference and Exhibition, 21-25 September 2009, Hamburg, Germany, p.733-739 V.S.Kalinovsky, V.V.Evstropov, V.M.Lantratov, M.A.Mintairov |
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GaSb structures with quantum dots in space charge region Proceedings of the 24th European PV Solar Energy Conference and Exhibition, 21-25 September 2009, Hamburg, Germany, p. 740-742 V.M.Andreev, V.S.Kalinovsky, R.V.Levin, B.V.Pushniy, V.D.Rumyantsev |
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Powerful high efficiency GaSb TPV and PV cells Proceedings of the 24th European PV Solar Energy Conference and Exhibition, 21-25 September 2009, Hamburg, Germany, p. 174-177 V.P.Khvostikov, S.V.Sorokina, N.S.Potapovich, A.S.Vlasov, M.Z.Shvarts, N.Kh.Timoshina, V.M.Andreev |
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Photoluminescence characterization of Te-doped GaSb for TPV applications Proceedings of the 24th European PV Solar Energy Conference and Exhibition, 21-25 September 2009, Hamburg, Germany, p.310-312 A.S. Vlasov, V.P. Khvostikov, E.P. Rakova, S.V. Sorokina, and V.M. Andreev |
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III-phosphides heterojunction solar cell interface properties from admittance spectroscopy, J. Phys. D - Appl. Phys., v.42, 16, 2009, ArtNo: #165307, A.S.Gudovskikh, J.P.Kleider, R.Chouffot, N.A.Kalyuzhnyy, S.A.Mintairov, V.M.Lantratov |
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Properties of Interfaces in GaInP Solar Cells Semiconductors, Vol. 43, No. 10, 2009, pp. 1363√1368. A.S.Gudovskikh, N.A.Kalyuzhnyy, V.M.Lantratov, S.A.Mintairov, M.Z.Shvarts, V.M.Andreev |
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AlGaAs/GaAs Photovoltaic Cells with an Array of InGaAs QDs Semiconductors, Vol. 43, No. 4, 2009, pp. 514√518. S.A.Blokhin, A.V.Sakharov, A.M.Nadtochy, A.S.Pauysov, M.V.Maximov, N.N.Ledentsov, A.R.Kovsh, S.S.Mikhrin, V.M.Lantratov, S.A.Mintairov, N.A.Kaluzhniy, M.Z.Shvarts |
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Lasing of whispering-gallery modes in asymmetric waveguide GaInP micro-disks with InP quantum dots, Phys. Lett. A, v.373, 12-13, 2009, pp. 1185-1188 , Y.Chu, A.M.Mintairov, Y.He, J.L.Merz, N.A.Kalyuzhnyy, V.M.Lantratov, S.A.Mintairov |
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